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QS8K2 30v nch +nch middle power mosfet datasheet ll outline v dss 30v tsmt8 r ds(on) (max.) 54m i d 3.5a p d 1.5w ll features ll inner circuit 1) low on - resistance. 2) built-in g-s protection diode. 3) small surface mount package(tsmt8) 4) pb-free lead plating ; rohs compliant ll packaging specifications type packing embossed tape ll application reel size (mm) 180 switching tape width (mm) 8 basic ordering unit (pcs) 3000 taping code tr marking k02 ll absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss 30 v continuous drain current i d 3.5 a pulsed drain current i d,pulse *1 12 a gate - source voltage v gss 12 v power dissipation total p d *2 1.5 w element 1.25 total p d *3 0.7 junction temperature t j 150 range of storage temperature t stg -55 to +150 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 1/11 20150730 - rev.001 downloaded from: http:///
QS8K2 datasheet ll thermal resistauce parameter symbol values unit min. typ. max. thermal resistance, junction - ambient total r thja *2 - - 83.3 /w element - - 100 total r thja *3 - - 178 ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 30 - - v breakdown voltage temperature coefficient v (br)dss i d = 1ma - 29 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = 30v, v gs = 0v - - 1 a gate - source leakage current i gss v ds = 0v, v gs = 12v - - 10 a gate threshold voltage v gs(th) v ds = 10v, i d = 1ma 0.5 - 1.5 v gate threshold voltage temperature coefficient v gs(th) i d = 1ma - -1.6 - mv/ t j referenced to 25 static drain - source on - state resistance r ds(on) *4 v gs = 4.5v, i d = 3.5a - 38 54 m v gs = 4v, i d = 3.5a - 40 56 v gs = 2.5v, i d = 3.5a - 55 77 gate input resistance r g f = 1mhz, open drain - 8 - forward transfer admittance |y fs | *4 v ds = 10v, i d = 3.5a 3.0 - - s www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 2/11 20150730 - rev.001 downloaded from: http:///
QS8K2 datasheet ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 285 - pf output capacitance c oss v ds = 10v - 90 - reverse transfer capacitance c rss f = 1mhz - 55 - turn - on delay time t d(on) *4 v dd ? 15v,v gs = 4.5v - 8 - ns rise time t r *4 i d = 1.7a - 12 - turn - off delay time t d(off) *4 r l = 8.8 - 29 - fall time t f *4 r g = 10 - 13 - ll gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *4 v dd ? 15v - 4.6 - nc gate - source charge q gs *4 i d = 3.5a - 0.7 - gate - drain charge q gd *4 v gs = 4.5v - 1.5 - ll body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s t a = 25 - - 1 a body diode pulse current i sp *1 - - 12 forward voltage v sd *4 v gs = 0v, i s = 3.5a - - 1.2 v *1 pw Q 10s , duty cycle Q 1% *2 mounted on a ceramic board (30300.8mm) *3 mounted on a fr4 (20200.8mm) *4 pulsed www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 3/11 20150730 - rev.001 downloaded from: http:///
QS8K2 datasheet ll electrical characteristic c r ves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 4/11 20150730 - rev.001 downloaded from: http:///
QS8K2 datasheet ll electrical characteristic curves fig. 5 typical output characteristics(i) fig.6 typical ou tput characteristics(ii) fig.7 breakdown voltage vs. junction temperature fig.8 typical transfer characteristics www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 5/11 20150730 - rev.001 downloaded from: http:///
QS8K2 datasheet ll electrical characteristic curves fig. 9 gate threshold voltage vs. junction temperature fig.10 forward transfer admittance vs. drain current fig.11 drain current derating curve fig.12 static dr ain - source on - state resistance vs. gate source voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 6/11 20150730 - rev.001 downloaded from: http:///
QS8K2 datasheet ll electrical characteristic curves fig. 1 3 static drain - source on - state resistance vs. junction temperature fig.14 static drain - source on - state resistance vs. drain current (i) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 7/11 20150730 - rev.001 downloaded from: http:///
QS8K2 datasheet ll electrical characteristic curves fig. 1 5 static drain - source on - state resistance vs. drain current (ii) fig.16 static drain - source on - state resistance vs. drain current (ili) fig.17 static drain - source on - state resistance vs. drain current (iv) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 8/11 20150730 - rev.001 downloaded from: http:///
QS8K2 datasheet ll electrical characteristic curves fig. 1 8 typical capacitance vs. drain - source voltage fig.19 switching characteristics fig.20 dynamic input characteristics fig.21 source c urrent vs. source drain voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 9/11 20150730 - rev.001 downloaded from: http:///
QS8K2 datasheet ll measurement circuits fig. 1-1 switching time measurement circuit fig. 1-2 switching waveforms fig. 2-1 gate charge measurement circuit fig. 2-2 ga te charge waveform www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 10/11 20150730 - rev.001 downloaded from: http:///
QS8K2 datasheet ll dimensions www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 11/11 20150730 - rev.001 downloaded from: http:///
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